PTF10112 Datasheet, Transistor, Ericsson

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Part number:

PTF10112

Manufacturer:

Ericsson

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324.91kb

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📄 Datasheet

Description:

60 watts/ 1.8-2.0 ghz goldmos field effect transistor. The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA application

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📁 Related Datasheet

PTF10111 - 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applic.

PTF10119 - 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10119 is an internally matched, mon source, N-channel enhancem.

PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor (Ericsson)
e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched mon source N-channel enhancement-mo.

PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications .

PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched mon source N-channel enhanceme.

PTF10122 - 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched mon source N-channel enha.

PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, mon source N-channel enhancem.

PTF10133 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cel.

PTF10134 - 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA a.

PTF10135 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10135 is a mon source N-channel enhancement-mode lateral MOSFET int.