PTF10119 Datasheet, Transistor, Ericsson

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Part number:

PTF10119

Manufacturer:

Ericsson

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141.55kb

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📄 Datasheet

Description:

12 watts/ 2.1-2.2 ghz goldmos field effect transistor. The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from

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📁 Related Datasheet

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PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
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PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10122 is an internally matched mon source N-channel enha.

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PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, mon source N-channel enhancem.

PTF10133 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cel.

PTF10134 - 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA a.

PTF10135 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10135 is a mon source N-channel enhancement-mode lateral MOSFET int.