PTF180101 Datasheet, Mhz, Infineon Technologies AG

PTF180101 Features

  • Mhz
  • Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.

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Part number:

PTF180101

Manufacturer:

Infineon ↗ Technologies AG

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310.60kb

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 10 w/ 1805-1880 mhz/ 1930-1990 mhz 10 w/ 2110-2170 mhz. The PTF180101 is a 10 W, internally  –matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Fu

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PTF180101 Application

  • Applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features
  • Typical EDGE perfor

TAGS

PTF180101
LDMOS
Power
Field
Effect
Transistor
1805-1880
MHz
1930-1990
MHz
2110-2170
MHz
Infineon Technologies AG

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Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 28V H-32259-2
DigiKey
PTF180101S-V1
0 In Stock
0
Unit Price : $0
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