PTF180601E - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz

Product Overview

Infineon Technologies AG

Part number	PTF180601E
Manufacturer	Infineon Technologies AG
File Size	233.47 KB
Description	LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
Datasheet	PTF180601E Datasheet
Additional preview pages of the PTF180601E datasheet.

The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band.

Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P.
1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power.
EVM RMS (Average %).
3 Efficiency 30 Efficiency (%).

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Other Datasheets by Infineon Technologies AG

PTF180601 - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601C - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180901E - GSM/EDGE RF Power FET
PTF180901F - GSM/EDGE RF Power FET

Published: Apr 16, 2005 |