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PTF180901F

GSM/EDGE RF Power FET

PTF180901F Features

* Optimized for bandwidths 1805 MHz

* 1880 MHz and 1930 MHz

* 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Lo

PTF180901F General Description

and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in questi.

PTF180901F Datasheet (169.64 KB)

Preview of PTF180901F PDF

Datasheet Details

Part number:

PTF180901F

Manufacturer:

Infineon ↗ Technologies AG

File Size:

169.64 KB

Description:

Gsm/edge rf power fet.
Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS .

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TAGS

PTF180901F GSM EDGE Power FET Infineon Technologies AG

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