PTF180901F - GSM/EDGE RF Power FET

Product Overview

Infineon Technologies AG

Part number	PTF180901F
Manufacturer	Infineon Technologies AG
File Size	169.64 KB
Description	GSM/EDGE RF Power FET
Datasheet	PTF180901F Datasheet
Additional preview pages of the PTF180901F datasheet.

and charts stated herein.

s.
Optimized for bandwidths 1805 MHz.
1880 MHz and 1930 MHz.
1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Typical EDGE performance.
Average output power = 35 W.
Gain = 14.5 dB.
Efficiency = 32%.

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Other Datasheets by Infineon Technologies AG

PTF180901E - GSM/EDGE RF Power FET
PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180601 - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601C - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601E - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz

Published: Apr 16, 2005 |