PTF180101S Datasheet, Mhz, Infineon Technologies AG

PTF180101S Features

• Mhz
• Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.

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Part number:

PTF180101S

Manufacturer:

Infineon ↗ Technologies AG

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310.60kb

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 10 w/ 1805-1880 mhz/ 1930-1990 mhz 10 w/ 2110-2170 mhz. The PTF180101 is a 10 W, internally  –matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Fu

PTF180101S Application

• Applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. Features
• Typical EDGE perfor

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