PTF180101S Datasheet - Infineon Technologies AG

PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz

PTF180101S Features

* Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR =

* 45 dBc Typical CW performance - Output power at P

* 1dB = 15 W - Ef

PTF180101S_InfineonTechnologiesAG.pdf

PTF180101S Datasheet Preview — Preview of PTF180101S PDF

Datasheet Details

Part number:

PTF180101S

Manufacturer:

Infineon ↗ Technologies AG

File Size:

310.60 KB

Description:

Ldmos rf power field effect transistor 10 w/ 1805-1880 mhz/ 1930-1990 mhz 10 w/ 2110-2170 mhz.

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📌 All Tags

PTF180101S LDMOS Power Field Effect Transistor 1805-1880 MHz 1930-1990 MHz 2110-2170 MHz Infineon Technologies AG