Part number:
PTF180101S
Manufacturer:
Infineon ↗ Technologies AG
File Size:
310.60 KB
Description:
Ldmos rf power field effect transistor 10 w/ 1805-1880 mhz/ 1930-1990 mhz 10 w/ 2110-2170 mhz.
PTF180101S Features
* Typical EDGE performance - Average output power = 4.0 W - Gain = 19.0 dB - Efficiency = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18.0 dB - Efficiency = 20% - ACPR =
* 45 dBc Typical CW performance - Output power at P
* 1dB = 15 W - Ef
PTF180101S_InfineonTechnologiesAG.pdf
Datasheet Details
PTF180101S
Infineon ↗ Technologies AG
310.60 KB
Ldmos rf power field effect transistor 10 w/ 1805-1880 mhz/ 1930-1990 mhz 10 w/ 2110-2170 mhz.
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