PTF180901E Datasheet - Infineon Technologies AG

PTF180901E GSM/EDGE RF Power FET

and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in questi.

Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability. P.

PTF180901E Features

* Optimized for bandwidths 1805 MHz

* 1880 MHz and 1930 MHz

* 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Lo

PTF180901E Datasheet (169.64 KB)

PTF180901E Datasheet Preview — Preview of PTF180901E PDF

Datasheet Details

Part number:

PTF180901E

Manufacturer:

Infineon ↗ Technologies AG

File Size:

169.64 KB

Description:

Gsm/edge rf power fet.

📁 Related Datasheet

PTF180901F GSM/EDGE RF Power FET (Infineon Technologies AG)

PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz (Infineon Technologies AG)

PTF180601 LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)

PTF180601C LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)

PTF180601E LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz (Infineon Technologies AG)

PTF181301 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz (Infineon Technologies AG)

PTF181301A LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz (Infineon Technologies AG)

PTF10007 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)

PTF10009 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)

TAGS

PTF180901E GSM EDGE Power FET Infineon Technologies AG

Image Gallery

PTF180901E Distributor