Datasheet Details
| Part number | PTF10120 | 
|---|---|
| Manufacturer | Ericsson | 
| File Size | 420.29 KB | 
| Description | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor | 
| Datasheet |  PTF10120_Ericsson.pdf | 
 
		  | Part number | PTF10120 | 
|---|---|
| Manufacturer | Ericsson | 
| File Size | 420.29 KB | 
| Description | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor | 
| Datasheet |  PTF10120_Ericsson.pdf | 
The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side C
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