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PTF10120 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

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Description

PTF 10120 120 Watts, 1.8 *2.0 GHz GOLDMOS™ Field Effect Transistor .
The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.

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Datasheet Specifications

Part number
PTF10120
Manufacturer
Ericsson
File Size
420.29 KB
Datasheet
PTF10120_Ericsson.pdf
Description
120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Applications

* from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
* INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB T

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120 Watts 1.8-2.0 GHz GOLDMOS Field Effect Transistor Ericsson
Ericsson PTF10120-like datasheet