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PTF10120

120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

PTF10120 General Description

The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability..

PTF10120 Datasheet (420.29 KB)

Preview of PTF10120 PDF

Datasheet Details

Part number:

PTF10120

Manufacturer:

Ericsson

File Size:

420.29 KB

Description:

120 watts/ 1.8-2.0 ghz goldmos field effect transistor.

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PTF10120 120 Watts 1.8-2.0 GHz GOLDMOS Field Effect Transistor Ericsson

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