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PTF10125

135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor

PTF10125 General Description

The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excelle.

PTF10125 Datasheet (291.84 KB)

Preview of PTF10125 PDF

Datasheet Details

Part number:

PTF10125

Manufacturer:

Ericsson

File Size:

291.84 KB

Description:

135 watts/ 1.4-1.6 ghz goldmos field effect transistor.

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PTF10125 135 Watts 1.4-1.6 GHz GOLDMOS Field Effect Transistor Ericsson

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