TFS-S Datasheet | Specifications & PDF Download

Power Module AEP550B08TFST Datasheet V1.0, 2022/12 -0- V1.0, 2022/12 Applications - Motor Drives - All-Terrain Vehicles - Automotive Applications

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Power Module AEP380B12TFST PRELIMINARY DATASHEET V1.0, 2023/03 Applications - Motor Drives - All-Terrain Vehicles - Automotive Applications - Hybrid

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Power Module AEP820B08TFST V1.2, 2022/12 Applications - Motor Drives - All-Terrain Vehicles - Automotive Applications - Hybrid Electrical Vehicles (H

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NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N−Channel Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimiz

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, Source Down Dual Cool) 33, WDFN9 25 V, 0.58 mW, 310 A NTTFSSCH0D7N02X Features • Excellen

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MOSFET - Power, Single N-Channel, m8FL 100 V, 30 mW, 35 A NTTFS030N10G Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Condu

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NTTFS4929N MOSFET – Power, Single, N-Channel, m8FL 30 V, 34 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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MOSFET – Power, Single, N-Channel 40 V, 14 mW, 26 A NVTFS5C478NL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimi

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NTTFS4932NTWG-VB NTTFS4932NTWG-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () Typ. 0.004 at VGS =

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Schottky Barrier Rectifier MBR8170TFS This Schottky rectifier is high performance device in m8−FL package. The lower forward voltage, less leakage cu

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NTTFS4H05N MOSFET – Power, Single, N-Channel, m8-FL 25 V, 94 A Features • Optimized Design to Minimize Conduction and Switching Losses • Optimized P

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NTTFS003N04C MOSFET – Power, Single, N-Channel 40 V, 3.5 mW, 103 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Min

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MOSFET – Power, Single, N-Channel 40 V, 4.9 mW, 77 A NVTFS004N04C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minim

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NTTFS4928N MOSFET – Power, Single, N-Channel, m8FL 30 V, 37 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, Source Down, WDFN9 80 V, 3.6 mW, 107 A Product Preview NTTFSSH4D0N08XL Features • Advanc

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TFS7701-7708 HiperTFS™-2 Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High-Voltage MOSFETs Product Enhance

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NIKO-SEM N-Channel Enhancement Mode P0270ATF(S) Field Effect Transistor TO-220F:P0270ATF TO-220FS:P0270ATFS Halogen-Free & Lead-Free D PRODUCT S

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NTTFS4939N MOSFET – Power, Single, N-Channel, m8FL 30 V, 52 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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NTTFS5820NL MOSFET – Power 60 V, 37 A, 11.5 mW Features • Low RDS(on) • Low Capacitance • Optimized Gate Charge • These Devices are Pb−Free and are

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MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NVTFS016N06C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) t

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