TFS-W Datasheet | Specifications & PDF Download

TFS7701-7708 HiperTFS™-2 Family Combined Two-Switch Forward and Flyback Power Supply Controllers with Integrated High-Voltage MOSFETs Product Enhance

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P0770ETF / P0770ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 1.4Ω @VGS = 10V ID 7A TO-220F TO-220FS ABSOLUTE M

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P0765GTF / P0765GTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 1.5Ω @VGS = 10V ID 7A TO-220F TO-220FS ABSOLUTE M

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NTTFS4932N MOSFET – Power, Single, N-Channel, m8FL 30 V, 79 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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NTTFS002N04C MOSFET  – Power, Single, N-Channel 40 V, 2.4 mW, 136 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mi

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NTTFS4929N MOSFET – Power, Single, N-Channel, m8FL 30 V, 34 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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Schottky Barrier Rectifier MBR8170TFS This Schottky rectifier is high performance device in m8−FL package. The lower forward voltage, less leakage cu

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P1350ATF / P1350ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 0.52Ω @VGS = 10V ID 13A TO-220F TO-220FS 100% UIS

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NTTFS4821N MOSFET – Power, Single, N-Channel, m8FL 30 V, 57 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize

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NTTFS4985NF MOSFET – Power, Single, N-Channel, WDFN8 30 V, 64 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • L

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P1665ZTF / P1665ZTFS N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 225mΩ @VGS = 10V ID 16A TO-220F TO-220FS ABSOLUT

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NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N−Channel, m8FL Features • Small Footprint (3.3x3.3 mm) for Compact Design • Low RDS(on) to Minimize C

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MOSFET - Power, Single N-Channel 100 V, 65 mW, 13 A NVTFS070N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Mini

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MOSFET - Power, Single N-Channel, m8FL 60 V, 16.3 mW, 32 A NVTFS016N06C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) t

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NTTFS015N04C MOSFET – Power, Single, N-Channel 40 V, 17.3 mW, 27 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Min

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P0780ATF/P0780ATFS N-Channel High Voltage Mode Field Effect Transistor PRODUCT SUMMARY V(BR)DSS RDS(ON) 800V 1.94Ω @VGS = 10V ID 7A TO-220F TO-

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NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Dri

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NTTFS4C10N MOSFET – Power, Single, N-Channel, m8FL 30 V, 44 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Dri

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MOSFET - Power, Single N-Channel 80 V, 7 mW, 71 A NVTFS007N08HL Features • Small Footprint (3.3x3.3 mm) for Compact Design • Low RDS(on) to Minimize

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MOSFET – Power, Single N-Channel, m8FL 60 V, 22.6 mW, 24 A NTTFS024N06C Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to

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