HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DE.
Clare Inc
TG-177 - HIGH ENERGY SPARK GAP DEVICES
HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require .
Clare Inc
TG-77 - HIGH ENERGY SPARK GAP DEVICES
HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require .
Philips
SA5778 - Serial triple gauge driver STGD
INTEGRATED CIRCUITS SA5778 Serial triple gauge driver (STGD) Product specification Supersedes data of 1997 May 27 IC18 Data Handbook 1998 Apr 03 Phi.
Philips
SA5778D - Serial triple gauge driver STGD
INTEGRATED CIRCUITS SA5778 Serial triple gauge driver (STGD) Product specification Supersedes data of 1997 May 27 IC18 Data Handbook 1998 Apr 03 Phi.
TriQuint Semiconductor
TGS4307-EPU - 77 GHz Transceiver Switch
Advance Product Information July 22, 2004 77 GHz Transceiver Switch Key Features • • • • • • • • TGS4307-EPU I/O Compatible with MA4GC6772 3 Antenna.
TriQuint Semiconductor
TGA4705-FC - 77 GHz Flip-Chip Low Noise Amplifier
TGA4705-FC 77 GHz Flip-Chip Low Noise Amplifier Key Features • • • • • • Frequency Range: 72 - 80 GHz Noise Figure: 5 dB at 77 GHz Gain: 23 dB Bias: V.
TriQuint Semiconductor
TGA4706-FC - 77 GHz Medium Power Amplifier
TGA4706-FC 77 GHz Medium Power Amplifier Key Features • • • • • • Frequency Range: 76 - 83 GHz Psat: 14 dBm at 77 GHz Gain: 15 dB Bias: Vd = 3.5 V, Vg.
TriQuint Semiconductor
TGC4704-FC - 38 - 77 GHz Doubler and Medium Power Amplifier
TGC4704-FC 38 to 77 GHz Doubler and Medium Power Amplifier Key Features • • • • • • • • • • • Output Power at 2 x Input Freq (dBm) 15 10 Measured Per.
TriQuint Semiconductor
TGS4307 - 77 GHz Transceiver Switch
Product Data Sheet August 5, 2008 77 GHz Transceiver Switch Key Features • • • • • • • • TGS4307 I/O Compatible with MA4GC6772 3 Antenna Ports Recei.
TGS
TA7792 - AM/FM 1 CHIP TUNER SYSTEM IC
TIGER ELECTRONIC CO.,LTD AM/FM 1 CHIP TUNER SYSTEM IC (1.5V USE) TA 7792 G ENERAL DESCRI PTI O N The TA7792 is AM/FM 1 chip tuner system (FM FRONT END.
Diodes
AH3777 - HIGH-VOLTGAE LOW-SENSITIVITY HALL EFFECT LATCH
AH3777 HIGH-VOLTGAE LOW-SENSITIVITY HALL EFFECT LATCH Description The AH3777 is a high voltage, low sensitivity Hall effect latch IC designed for com.
Toshiba
TB62771FTG - Step-up DC/DC controller built in 4-channel sink driver
TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62771FTG Step-up DC/DC controller built in 4-channel sink driver for white LED 1. General descrip.
Halo
TG110-S177N2LF - SMD Single Port 10/100BASE-TX Transformer
ULTRA™Family of Transformers SMD Single Port 10/100BASE-TX Transformer RoHS Compliant Conflict FREE ü US Patent Numbers: 5,656,985 6,297,721 B1 6,.
Halo
TG110-S177N2RL - SMD Single Port 10/100BASE-TX Transformer
ULTRA™Family of Transformers SMD Single Port 10/100BASE-TX Transformer RoHS Compliant Conflict ü FREE US Patent Numbers: 5,656,985 6,297,721 B1 6.
qorvo
TGF2977-SM - RF Transistor
Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz and 32 V supply. The device is in an i.
Toshiba
TGI7785-130LHA - MICROWAVE POWER GaN HEMT
MICROWAVE POWER GaN HEMT TGI7785-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 44dBm ŋHIGH GAIN GL= 11.5dB at .
Toshiba
TGI7785-120L - MICROWAVE POWER GaN HEMT
MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at .
Toshiba
TGI7785-60LHA - MICROWAVE POWER GaN HEMT
MICROWAVE POWER GaN HEMT TGI7785-60LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 48.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 11.5dB at P.
Toshiba
TC7716FTG - DC booster controller
TC7716FTG Toshiba CDMOS Integrated Circuit Silicon Monolithic TC7716FTG Residential and Commercial Renewable Energy System (up to 1000 V AC or Outl.
