HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DE.
P0903BTG - N-Channel MOSFET
P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 2.STGB18N40LZT4 - Automotive-grade 390V internally clamped IGBT
STGB18N40LZT4 Datasheet Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ TAB 3 1 D2PAK C (2 or TAB) Features • AEC-Q101 qualified • SCIS .V05K190-5 - Metal Oxide Varistor
Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1.TTG90N03AT - 30V N-Channel Trench MOSFET
TTG90N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) Features Trench Power Technology Low RDS(ON) Low Ga.TGA9083-EEU - Power Amplifier
T R I Q U I N T S E M I C O N D U C T O R , I N C . TGA9083-EEU Power Amplifier q q q q q q q PHOTO ENLARGEMENT 6.5 to 11.5- .TGA9088A-SCC - 20 GHz Medium Power Amplifier
Product Data Sheet September 26, 2002 17-21 GHz Medium Power Amplifier • • • • • • TGA9088A-SCC Key Features and Performance 0.25um PHEMT Technolog.TGS4306-FC - 70-90 GHz SP4T Switch Flip Chip
TGS4306-FC 70-90 GHz SP4T Switch Flip Chip Key Features • • • • • • • Frequency Range: 70-90 GHz 3.0 dB Typical Flipped Insertion Loss 20 dB Nominal I.TPS79901DDCTG4 - High-PSRR Low-Dropout Linear Regulator
TPS799 SBVS056L – JANUARY 2005 – REVISED FEBRUARY 2022 TPS799 200-mA, Low-Quiescent Current, Ultralow Noise, High-PSRR Low-Dropout Linear Regulator 1.MBRB2090CTG - Schottky Rectifier
MBRB20...CTG, MBR20...CTG-1 Vishay High Power Products Schottky Rectifier, 2 x 10 A MBRB20...CTG MBR20...CTG-1 Base common cathode 2 Base common c.TGA2904-FL - Ku Band 2 Watt Packaged Amplifier
Advance Productwww.DataSheet4U.com Information April 5, 2006 Ku Band 2 Watt Packaged Amplifier • • • • • • • • TGA2904-FL Key Features and Performa.TGA4906 - 4 Watt Ka Band High Power Amplifier
TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, .S9012 - PNP Transistor
TIGER ELECTRONIC CO.,LTD S9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The S9012 is designed for use in 1W output amplifier of portable radios i.TB6590FTG - Dual DC Motor Driver
TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6590FTG Dual DC Motor Driver TB6590FTG The TB6590FTG is a dual DC motor driver IC using LDMOS o.MBR2090CTG - Switch-mode Power Rectifiers
MBR2080CTG, MBR2090CTG, MBR20100CTG Switch-mode Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These .TG9015 - RF Attenuator
RF Attenuator Negative Control Voltage: 0 to -10 Volts Model TG9015 5 to 1000 MHz www.DataSheet4U.com SPECTRUM MICROWAVE • 2144 Franklin Drive N.E.TG9030 - RF Attenuator
RF Attenuator Attenuation Range: 40 dB to 1000 MHz Model TG9030 100 to 2000 MHz www.DataSheet4U.com SPECTRUM MICROWAVE • 2144 Franklin Drive N.E. •.P0903BTG - N-Channel MOSFET
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BTG TO-220 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 9.5m I.TGA9092-EPU - 6 - 18 GHz High Power Amplifier
Advance Product Information 6 - 18 GHz High Power Amplifier Key Features and Performance • • • • • • • • Dual Channel Power Amplifier 0.25um pHEMT Te.STGD18N40LZ - Automotive-grade 390V internally clamped IGBT
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.