TG-90 Datasheet | Specifications & PDF Download

Applications  Electronic Warfare  Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 1

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Toshiba Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB9051FTG TB9051FTG PWM type single channel H-Bridge DC brushed motor driver for automo

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TIGER ELECTRONIC CO.,LTD 10A SCRs DESCRIPTION Glass passivated thyristors in a plastic envelope, intended for use in applications requiring high bidir

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TIGER ELECTRONIC CO.,LTD S9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The S9012 is designed for use in 1W output amplifier of portable radios i

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VS-MBRB20 CTGPbF, VS-MBR20 CTG-1PbF Series Vishay High Power Products Schottky Rectifier, 2 x 10 A VS-MBRB20 CTGPbF VS-MBR20 CTG-1PbF Base

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Applications  Electronic Warfare  Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Product Features  Frequency Range:

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TPS799 SBVS056L – JANUARY 2005 – REVISED FEBRUARY 2022 TPS799 200-mA, Low-Quiescent Current, Ultralow Noise, High-PSRR Low-Dropout Linear Regulator 1

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LCF Series Common Mode Noise Filter LCF Series Pinout Two Lines Pin1 Pin2 Item Rdc CM Impedance Four Lines Pin3 Pin4 Description Pin 1-3, 2-4

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LCF Series Common Mode Noise Filter LCF Series Pinout Two Lines Pin1 Pin2 Item Rdc CM Impedance Four Lines Pin3 Pin4 Description Pin 1-3, 2-4

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LCF Series Common Mode Noise Filter LCF Series Pinout Two Lines Pin1 Pin2 Item Rdc CM Impedance Four Lines Pin3 Pin4 Description Pin 1-3, 2-4

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LCF Series Common Mode Noise Filter LCF Series Pinout Two Lines Pin1 Pin2 Item Rdc CM Impedance Four Lines Pin3 Pin4 Description Pin 1-3, 2-4

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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STG3690 LOW VOLTAGE 5Ω MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE s s s s s s HIGH SPEED: tPD = 0.3ns (TYP.) at VCC = 3.0V tPD = 0.4ns

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www.DataSheet4U.com STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH™ IGBT Preliminary Data Features Type STGW30N90D ■ ■ ■ ■ ■ ■ VCES 9

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 2

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BTG TO-220 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 9.5m I

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STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ Datasheet - production data TAB 3 1 D2PAK TAB 3 1 DPAK Feature

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Silicon Carbide (SiC) Module – EliteSiC, 2 x 10 mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package NXH020U90MNF2PTG The NXH020U90M

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