TGI9098-100P Datasheet - Toshiba

TGI9098-100P, MICROWAVE POWER GaN HEMT

Features

* ŋINTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULSE OPERATION Pulse width= 100μs, Duty cycle= 10% MICROWAVE POWER GaN HEMT TGI9098-100P RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Powe

TGI9098-100P-Toshiba.pdf