
TIM0910-30L (Toshiba)
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
TIM0910-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB
(24 views)
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・H.
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
TIM0910-8 Distributor