
TIM0910-4 - MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN
G1dB= 7.5dB at 9.5GHz to 10.5GHz ・HERMETICALLY S
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FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・H.
TIM0910-8 Distributor