TIM1414-8L Datasheet | Specifications & PDF Download

MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB=

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www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation di

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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ･LOW INTERMOD

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