TIM1414-8L

Microwave Power GaAs FET

Toshiba

* Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level

* High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz

* High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz

* Broad band internally matched

* Hermetically sealed package RF

TIM1414-8L

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Microwave power gaas fet.

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TIM1414-8L Microwave Power GaAs FET Toshiba

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