TIM1414-8L - Microwave Power GaAs FET

Product Overview

Toshiba

Part number	TIM1414-8L
Manufacturer	Toshiba
File Size	322.48 KB
Description	Microwave Power GaAs FET
Datasheet	TIM1414-8L Datasheet
Additional preview pages of the TIM1414-8L datasheet.

Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level.
High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz.
High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz.
Broad band internally matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efﬁciency 3rd Order Intermodula.

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Published: Jul 30, 2006 |