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TIM1414-8L Microwave Power GaAs FET

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Description

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) .

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Features

* Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level
* High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz
* High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz
* Broad band internally matched
* Hermetically sealed package RF

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended

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TIM1414-8L Microwave Power GaAs FET Toshiba
Toshiba TIM1414-8L-like datasheet
TIM1414-8
TIM1414-8-252
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TIM1414-10A-252
TIM1414-10LA