Datasheet Details
- Part number
- TIM1414-8L
- Manufacturer
- Toshiba ↗
- File Size
- 322.48 KB
- Datasheet
- TIM1414-8L_Toshiba.pdf
- Description
- Microwave Power GaAs FET
TIM1414-8L Description
www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) .TIM1414-8L Features
* Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier levelTIM1414-8L Applications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended📁 Related Datasheet
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