TIM1414-8 - Microwave Power GaAs FET

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Toshiba

Part number	TIM1414-8
Manufacturer	Toshiba
File Size	425.92 KB
Description	Microwave Power GaAs FET
Datasheet	TIM1414-8 Datasheet
Additional preview pages of the TIM1414-8 datasheet.

High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz.
High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz.
Broad Band Internally Matched.
Hermetically sealed package RF Performance Speciﬁcations (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efﬁciency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5GHz Condition Unit dBm dB A % °C.

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Published: Jul 30, 2006 |