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TIM1414-8 Microwave Power GaAs FET

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Description

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) .

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Features

* High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz
* High gain - G1dB = 5.0 dB at 14.0 GHz to 14.5 GHz
* Broad Band Internally Matched
* Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended

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📌 All Tags

TIM1414-8 Microwave Power GaAs FET Toshiba
Toshiba TIM1414-8-like datasheet
TIM1414-8-252
TIM1414-8L
TIM1414-10A
TIM1414-10A-252
TIM1414-10LA