TN2-12 Datasheet | Specifications & PDF Download

STN2120 Multiprotocol OBD to UART Interpreter Datasheet STN2120 Table of Contents 1.0 Overview

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Plan

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SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina

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ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V www.DataSheet4U.com hFE > 500 IC(cont) = 6.5A VCE(sat) < 38mV @ 1A RC

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SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina

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SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina

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SLIM POLARIZED RELAY TN RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Self-clinching terminal also available 14 .551 5.6 .220 9.8 .386 FE

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SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina

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ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD =

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C853E3 Issued Date : 2004.06.15 Revised Date : 2004.07.14 Page No. : 1/5 NPN Epitaxial Pla

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Pla

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ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC(cont) = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD =

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SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina

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1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w L

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SLIM POLARIZED RELAY TN RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Self-clinching terminal also available 14 .551 5.6 .220 9.8 .386 FE

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TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L

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E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µ

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SLIM POLARIZED RELAY TN RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Self-clinching terminal also available 14 .551 5.6 .220 9.8 .386 FE

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