TN2510 Datasheet | Specifications & PDF Download

CYStech Electronics Corp. Spec. No. : C741J3 Issued Date : 2009.09.21 Revised Date :2013.12.26 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFE

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Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ

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ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀

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Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ

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CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2015.10.15 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN251

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ZXTN25100BFH 100V, SOT23, medium power transistor Summary BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m⍀ PD =

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Features  BVCEO > 100V  BVCEX > 170V Forward Blocking Voltage  BVECO > 6V Reverse Blocking Voltage  IC = 3A high Continuous Collector Current  Lo

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Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ

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Features  BVCEO > 100V  BVECO > 6V  IC = 2.5A Continuous Collector Current  ICM = 3.5A Peak Collector Current  VCE(SAT) < 100mV @ 1A  RCE(SAT) =

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TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Low threshold (2.0V max.) ► High input impedance ► Low input capacitance (125pF max.)

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ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m

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TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacitanc

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