TO-220F Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval

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TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series s Features qWith built-in Avalanche diode qAverage on-state current: IT(AV)=3A qGat

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TO-220F 3A Thyristor TF321S, TF341S, TF361S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A q

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TO-220F 12A Triac TM1241S-R, TM1261S-R s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=12A qGate trigger

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TO-220F 5A Thyristor TF521S, TF541S, TF561S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=5A q

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SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N06 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typical 57nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW8N

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typical 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested SW5N6

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isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 44mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanc

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TO-220F 5A Triac TM541S-L, TM561S-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=5A qGate trigger cur

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® STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP20NE06 STP20NE06FP s s s s s V DSS 60 V 60 V

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TO-220F 16A Triac TM1641S-L, TM1661S-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger

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Surface Mount Power Inductor FEATURES • SIZES 0806, 1008 & 1210 SIZES • HIGH CURRENT AND LOW DCR CHARACTERISTICS • REFLOW SOLDERABLE • PACKAGE ON TAP

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Surface Mount Power Inductor FEATURES • SIZES 0806, 1008 & 1210 SIZES • HIGH CURRENT AND LOW DCR CHARACTERISTICS • REFLOW SOLDERABLE • PACKAGE ON TAP

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SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capabil

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TO-220F 8A Thyristor TF821S, TF841S, TF861S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=8A q

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NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested •

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NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices

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