TO-220F Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 180mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalan

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isc N-Channel MOSFET Transistor AOT2610L FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Res

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SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V

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TO-220F 3A Thyristor TF321S, TF341S, TF361S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A q

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TO-220F 8A Thyristor TF821S, TF841S, TF861S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=8A q

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www.DataSheet4U.com DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 L10 DIA. 2.40 0.30 3.00 3.20 3.40 15.90 16.40 9.00 9.30 0.094 0.01

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Bulletin I2134 rev. C 03/99 SAFEIR Series 20ETS..FP INPUT RECTIFIER DIODE TO-220 FULLPAK Description/Features The 20ETS..FP rectifier SAFE IR series

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Discrete Products CD-ROM Selection Guide Power MOSFET Selector TO-220F Part Number N-Channel FQPF85N06 FQPF65N06 FQPF50N06 FQPF30N06L FQPF20N06L FQPF1

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TO-220F 5A Thyristor TF521S, TF541S, TF561S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=5A q

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*RoHS COMPLIANT Features ■ TO220 or TO221 housing ■ Low inductance ■ SMD and through hole versions ■ High power rating Models PWR220-2FB, PWR221-2FB

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Stati

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DC CORE MOTOR C1220F Precious Metal Commutation : 、、、、。 Applications: security equipment, small electronic products, remote control model aircraft

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Bulletin I2134 rev. C 03/99 SAFEIR Series 20ETS..FP INPUT RECTIFIER DIODE TO-220 FULLPAK Description/Features The 20ETS..FP rectifier SAFE IR series

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Surface Mount Power Inductor FEATURES • SIZES 0603, 0805, 0806, 1008 & 1210 SIZES • HIGH CURRENT AND LOW DCR CHARACTERISTICS • REFLOW SOLDERABLE • PA

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TO-220F 5A Thyristor TF521S, TF541S, TF561S s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=5A q

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TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series s Features qWith built-in Avalanche diode qAverage on-state current: IT(AV)=3A qGat

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NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested •

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D A T A S H E E T Optoelectronics Preliminary Data Sheet www.DataSheet4U.com VTP1220FB IR Blocking Silicon Photodiode Description This VTP proces

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2010.12 - Rev .F http://www.Datasheet4U.com TO220FP Design Support Document www.rohm

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