TP1 Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.01

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FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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FTP16N06B N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier • Uninterruptible Power Supply (UPS) Features: • RoHS Co

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Dat

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( DataSheet : www.DataSheet4U.com ) STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247 Zener-Protected Supe

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3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

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ZXTP19020CFF 20V PNP LOW SATURATION VOLTAGE TRANSISTOR IN SOT23F Features  BVCEO > -20V  BVECO > -5V  IC = -5A Continuous Collector Current  IC =

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Features  BVCEO > -60V  BVECO > -7V  IC = 5A High Continuous Current  Low Saturation Voltage VCE(sat) < -80mV @ 1A  RCE(sat) = 50mΩ  Complementa

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3PEAK Features TP1561A/ TP1561NA/TP1562A/TP1564A Stable 6MHz, 500μA, RRIO, Precision, Op Amps Description  Stable 6 MHz GBWP in VCM from 0V to VS 

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® STP16N10L N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR TYPE STP16N10L s s s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID 16 A T

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3PEAK TP1961/TP1962/TP1964 Features 7ns, 1/2/4, Ultra-High-Speed, +3V/+5V, Beyond-the-Rails Comparators Description ◼ Ultra-Fast, 7ns Propagation

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NTP150N65S3HF MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 24 A, 150 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high

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JMTP130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features  VDS= -40V, ID= -40A RDS(ON) < 14.3mΩ @ VGS = -10V RDS(ON) < 22mΩ @ V

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ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC(cont) = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Comp

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ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC(cont) = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Comp

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STP15810 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220

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ZXTP19020DFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Features  BVCEO > -20V  BVECO > -4V  IC = -5.5A Continuous Collector Current  ICM = -15A P

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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