| Part Number | Description | Manufacture |
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N-Channel MOSFET ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE FTP1404 TO-220 BRAND IPS FTP1404 Lead Free Package and Finish VDSS 40V RDS(ON)( |
 IPS |
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N-channel MOSFET TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • 100% avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-cha |
 STMicroelectronics |
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STP1806 Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH |
 ST Microelectronics |
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N-CHANNEL POWER MOSFET Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss App |
STMicroelectronics |
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N-Channel MOSFET • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves Ordering Information PART NUMBER FTP11N08A PACKAGE TO-220 BRAND FTP11N08A Pb Lead Free Package and Finish VDSS 75V RDS(ON) |
IPS |
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N-Channel MOSFET • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve Ordering Information PART NUMBER FTP16N06A PACKAGE TO-220 BRAND FTP16N06A Pb Lead Free Package and Finish VDSS 55V RDS(ON) (Max.) 16 m: ID 65A D GDS |
IPS |
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STP10NK80ZFP TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) ID 0.90Ω 9A 0.90Ω 9A 0.90Ω 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Ve |
ST Microelectronics |
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STP140NF55 www.DataSheet4U.com Type VDSS 55V 55V 55V RDS(on) 0.008Ω 0.008Ω 0.008Ω ID (1) 80A 80A 80A 3 1 2 STB140NF55 STB140NF55-1 STP140NF55 1. Current limited by package 3 1 3 12 Description This Power MOSFET is the latest development of STMicroel |
STMicroelectronics |
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N-Channel Power MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH |
ST Microelectronics |
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STP13NK60ZFP Type STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z ■ ■ ■ Package RDS(on) 0.55 Ω 0.55 Ω 0.55 Ω 0.55 Ω 0.55 Ω ID 13 A 13 A 13 A 13 A 13 A Pw 150 W 150 W 35 W 150 W 150 W VDSS 600 600 600 600 600 V V V V V 3 1 2 TO-220 3 1 2 3 12 |
STMicroelectronics |
| Total 1030 results |
