STP15810 Description
This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STP15810 Table 1. Device summary Marking Package 15810 TO-220 Packaging Tube August 2014 This is information on a product in full production.
STP15810 Key Features
- 100% avalanche tested
- Ultra low on-resistance