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STP15810 - N-channel MOSFET

General Description

This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

 6  $0Y Order code STP15810 Table 1

Key Features

  • TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W.
  • 100% avalanche tested.
  • Ultra low on-resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP15810 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W • 100% avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. *  6  $0Y Order code STP15810 Table 1. Device summary Marking Package 15810 TO-220 Packaging Tube August 2014 This is information on a product in full production.