STMicroelectronics STP15810
This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STP15810 |
|---|---|
| Datasheet | STP15810 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W● 100% avalanche tested
● Ultra low on-resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
* 6 $0 Y Order code STP15810 Table 1. Device summary Marking Package 15810 TO-220 Packaging Tube August 2014 This is information on a product in full production. DocID024972 Rev 4 1/13 Contents Contents STP15810 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electric
