STP150N3LLH6 Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. 4 2.1 (curves) .........................
STP150N3LLH6 Key Features
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
- Switching