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STP150NF04 - N-channel Power MOSFET

General Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Type STP150NF04 VDSS 40 V RDS(on) max < 0.007 Ω.
  • 100% avalanche tested.
  • Standard level gate drive ID 80 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP150NF04 N-channel 40 V, 0.005 Ω typ., 80 A STripFET™II Power MOSFET in a TO-220 package Datasheet — production data Features Type STP150NF04 VDSS 40 V RDS(on) max < 0.007 Ω ■ 100% avalanche tested ■ Standard level gate drive ID 80 A Applications ■ Switching applications TAB 3 2 1 TO-220 Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Figure 1. Internal schematic diagram $ 4!" ' Table 1.