TP2502 P-Channel Enhancement-Mode Vertical DMOS F.
STP250S - 250 Watt MONOCRYSTALLINE SOLAR MODULE
STP250S - 20/Wd STP245S - 20/Wd 250 Watt Features 15.2% MONOCRYSTALLINE SOLAR MODULE High module conversion efficiency (up to 15.2%), through super.STP250 - 255 Watt POLYCRYSTALLINE SOLAR MODULE
STP255 - 20/Wd STP250 - 20/Wd STP245 - 20/Wd STP240 - 20/Wd 255 Watt Features POLYCRYSTALLINE SOLAR MODULE High module conversion efficiency Module .ZXTP25040DZ - 40V PNP medium power transistor
ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4.TTP250 - 4-bit CPU base microcontroller
Preliminary TTP250 TonTouchTM § PATENTEN 1. PATENT :『』 PAT NO. I339356 (Taiwan) PAT NO. ZL 2007 1 0202087. 0 (CHINA) 2. PATENT :『』 PAT NO. M383780 (.ZXTP25020DFH - PNP Transistor
ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W .ZXTP25012EZ - 20V PNP high gain transistor
ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Comp.ZXTP25020DZ - 20V PNP high gain transistor
ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Com.ZXTP25040DFH - PNP medium power transistor
www.DataSheet4U.com ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m⍀ ; VCE(sat) .STP250S-20 - 250 Watt MONOCRYSTALLINE SOLAR MODULE
STP250S - 20/Wd STP245S - 20/Wd 250 Watt Features 15.2% MONOCRYSTALLINE SOLAR MODULE High module conversion efficiency (up to 15.2%), through super.ZXTP25040DFL - 40V PNP LOW POWER TRANSISTOR
Features • BVCEO > -40V • BVECO > --3V • IC = -1.5A Continuous Collector Current • VCE(sat) < -115mV @ -1A • RCE(sat) = 82mΩ • High Peak Current • Com.ZXTP25020CFH - 20V PNP LOW POWER TRANSISTOR
ZXTP25020CFH 20V PNP LOW POWER TRANSISTOR IN SOT23 Features BVCEO > -20V BVECO > -7V IC = -4A Continuous Collector Current VCE(sat) < -55mV @.ZTP25040DFHQ - 40V PNP TRANSISTOR
Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of automotive applications. Features • BVCEO > -40V •.TP250A - Current Transducers
Topstek Current Transducers TP25A .. TP300A TP 25A~300A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight. Three sensors in o.TP2502 - P-Channel Enhancement-Mode Vertical DMOS FETs
TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features ► Low threshold (-2.4V max.) ► High input impedance ► Low input capacitance (125pF max.ZXTP25060BFH - PNP Transistor
ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ ty.ZXTP25020DFL - PNP Transistor
ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m⍀ PD = 350mW Co.ZXTP25020BFH - PNP Transistor
ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @.ZXTP25012EFH - PNP Transistor
ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC(cont) = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Co.ZXTP25012EZTA - 20V PNP high gain transistor
ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Comp.