TP250 Datasheet | Specifications & PDF Download

Topstek Current Transducers TP25A .. TP300A TP 25A~300A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight. Three sensors in o

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TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features ► Low threshold (-2.4V max.) ► High input impedance ► Low input capacitance (125pF max

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TP2502 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2.4V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacit

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STP250S - 20/Wd STP245S - 20/Wd 250 Watt Features 15.2% MONOCRYSTALLINE SOLAR MODULE High module conversion efficiency (up to 15.2%), through super

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STP255 - 20/Wd STP250 - 20/Wd STP245 - 20/Wd STP240 - 20/Wd 255 Watt Features POLYCRYSTALLINE SOLAR MODULE High module conversion efficiency Module

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of automotive applications. Features • BVCEO > -40V •

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ZXTP25020DG Green 20V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features  BVCEO > -20V  BVCBO > -25V  IC = -6A High Continuous Current  hFE

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ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @

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ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC(cont) = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Co

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Description Advanced process capability and packaging maximize the power handling and performance of this small outline transistor. The reverse blocki

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ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W

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ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4

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www.DataSheet4U.com ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m⍀ ; VCE(sat)

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ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m⍀ PD = 350mW Co

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ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC(cont) = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W

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ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Comp

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ZXTP25020CFH 20V PNP LOW POWER TRANSISTOR IN SOT23 Features  BVCEO > -20V  BVECO > -7V  IC = -4A Continuous Collector Current  VCE(sat) < -55mV @

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Preliminary TTP250 TonTouchTM § PATENTEN 1. PATENT :『』 PAT NO. I339356 (Taiwan) PAT NO. ZL 2007 1 0202087. 0 (CHINA) 2. PATENT :『』 PAT NO. M383780 (

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ZXTP25040DFL 40V, SOT23, PNP low power transistor Summary BVCEO > -40V BVECO > -3V IC(cont) = -1.5A VCE(sat) < -115mV @ 1A RCE(sat) = 82m⍀ PD = 350mW

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