TS8 Datasheet | Specifications & PDF Download

NRVTS860EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Leak

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NRVTS860EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Leak

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NTS8100MFS, NRVTS8100MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Ve

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PROFET® BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Operating Voltage Vbb(on) Active channels: On-sta

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www.DataSheet4U.com ISTS802, ISTS802A, ISTS802B, ISTS802C 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES WITH T

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NTS8100MFS, NRVTS8100MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Ve

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NRVTS8120EMFS Very Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Volt

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NRVTS860EMFS Exceptionally Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low Leak

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NTS860MFS Exceptionally Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low

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TS8423K TS8423K – 20 W GaN Broadband RF Switch SPDT 1.0 Features  Low insertion loss: 0.2dB @ 800MHz  High isolation: 45dB @ 800MHz  High CW power

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Angular Rate Sensors/EWTS82 Compact Quartz Angular Rate Sensors on Board Type Type: EWTS821111 This angular rate sensor utilizes CORIOLIS force gen

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TN805, TN815 TS820, TYN608 Datasheet Sensitive and standard 8 A SCRs A A K G TO-220AB G A TO-220FPAB K A G A K A K A G IPAK K AG A TO-220A

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TS86246P – SPDT 200W Average Power Switch HF Band 1 – 30 MHz TS86246P 1.0 Features • Low insertion loss: 0.08dB @ 1 MHz • High isolation: 58 dB @ 1

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Dual N-Channel MOSFET DTS8203 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.012 at VGS = 4.5 V 0.015 at VGS = 2.5 V ID (A) 7.6 6.5 FEA

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TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TS820 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use i

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TS821 1.225V micropower shunt voltage reference Features ■ 1.225V typical output voltage ■ Ultra low operating current: 45μA maximum at 25°C ■ High p

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POWER MANAGEMENT TS80002 High-Efficiency Transmit Controller for Wireless Power Systems Features  Supports portable wireless charging applications

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TS882 TS884 Rail-to-rail 1.1 V dual and quad nanopower comparators Datasheet - production data DFN8 (2 x 2 mm) MiniSO8 Related product • See the T

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www.DataSheet4U.com ISTS802, ISTS802A, ISTS802B, ISTS802C 0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER SWITCHES WITH T

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TS80000 High Efficiency Transmitter Controller for Wireless Power Systems TRIUNE PRODUCTS Features • Supports Qi®, PMA and proprietary charging app

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