TS8 Datasheet | Specifications & PDF Download

NTS8100MFS, NRVTS8100MFS Very Low Forward Voltage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Ve

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ACTS86MS April 1995 Radiation Hardened Quad 2-Input Exclusive OR Gate Features • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si)

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Dual N-Channel MOSFET DTS8205 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.018 at VGS = 4.5 V 0.023 at VGS = 2.5 V ID (A) 5.6 4.5 FEA

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TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TS820 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use i

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VDS VGS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V ±20 V 19 m 29 m 4.8 nC 8.2 A Applications System/L

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VTS Process Photodiodes PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic

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VTS Process Photodiodes PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic

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VTS Process Photodiodes PRODUCT DESCRIPTION This series of planar, P on N, large area silicon photodiodes is characterized for use in the photovoltaic

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Standard Products UT54ACTS899 9-bit Latchable Transceiver with Parity Generator/Checker Datasheet May 16, 2012 www.aeroflex.com/Logic FEATURES  Latc

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Standard Products UT54ACS85/UT54ACTS85 4-Bit Comparators Datasheet November 2010 www.aeroflex.com/logic FEATURES ‰ 1.2μ CMOS - Latchup immune ‰ High

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Standard Products UT54ACS86/UT54ACTS86 Quadruple 2-Input Exclusive OR Gates Datasheet November 2010 www.aeroflex.com/logic FEATURES ‰ 1.2μ CMOS - Lat

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TN805, TN815 TS820, TYN608 Datasheet Sensitive and standard 8 A SCRs A A K G TO-220AB G A TO-220FPAB K A G A K A K A G IPAK K AG A TO-220A

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TS8423K TS8423K – 20 W GaN Broadband RF Switch SPDT 1.0 Features  Low insertion loss: 0.2dB @ 800MHz  High isolation: 45dB @ 800MHz  High CW power

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TS86246P – SPDT 200W Average Power Switch HF Band 1 – 30 MHz TS86246P 1.0 Features • Low insertion loss: 0.08dB @ 1 MHz • High isolation: 58 dB @ 1

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HCTS86MS October 1995 Radiation Hardened Quad 2-Input Exclusive OR Gate Features Pinouts • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K

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HTS8A80AS HTS8A80AS 8A TRIAC FEATURES ‰ Repetitive Peak Off-State Voltage : 1000V ‰ R.M.S On–State Current (IT(RMS) = 8A) ‰ Gate Trigger Current : 10

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BTS 824R Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb Active channels On-state Resistan

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PROFET® BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Operating Voltage Vbb(on) Active channels: On-sta

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Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth (-3 dB) 1 GSPS (min) Sampling R

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TS824-2.5 HIGH THERMAL STABILITY MICROPOWER SHUNT VOLTAGE REFERENCE s LOW Tc: 50 ppm/°C MAXIMUM s 2.5V OUTPUT VOLTAGE s LOW OPERATING CURRENT: 60µA ma

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