TTD1415 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Vol

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isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation

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Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Power Switching • Hammer Drivers 2. Features (1) High

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