TTi Datasheet | Specifications & PDF Download

GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-34SF4BT Features  Mechanically and spectrally matched to the phototransistor.  RoHS compliant. De

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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L-13-155-G-B 1310 nm Light Emitting Diodes www.DataSheet4U.com Features • High efficiency • -40 to +85˚C operating temperature • Hermetically sealed

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30DL20 POTTING TYPT HV SUBASSEMBLY VOLTAGE RANGE: 20 KV CURRENT: 3.0 A Features Diffused Junction High Voltage Capability High Case Dielectric Streng

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T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L-53SF7BT Features MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. BOTH WATER CLEAR LENS

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T-1 3/4 (5mm) INFRARED EMITTING DIODE Part Number: L-53F3BT Features z Mechanically and spectrally matched to the phototransistor. z Blue transparent

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Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a cha

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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1310nm L –13 -155-G-B L-13-155-G-BB 1310nm Light Emitting Diodes Absolute Maximum Ratings(Tc=25℃) Parameter Reverse voltage Forward Current Solderin

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20DL20-1 POTTING TYPT HV SUBASSEMBLY VOLTAGE RANGE: 20 KV CURRENT: 2.0 A Features Diffused Junction High Voltage Capability High Case Dielectric Stre

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

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T-1 3/4 (5mm) INFRA-RED EMITTING DIODE P/N: L-53SF4BT Features MECHANICALLY AND SPECTRALLY MATCHED TO THE L-53P3C PHOTOTRANSISTOR. BLUE TRANSPARENT L

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Photocoupler PC-17L1 • PC-17L2 • PC-17L4 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor

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T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-34F3BT Features z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. Des

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L-34F3C T-1 (3mm) Infrared Emitting Diode DESCRIPTION F3 Made with Gallium Arsenide Infrared Emitting diodes PACKAGE DIMENSIONS FEATURES Mechanical

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T-1 3/4 (5mm) INFRARED EMITTING DIODE L-53SF7C Features zMECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. zBOTH WATER CLEAR LENS A

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