Features • High-performance, Low-power AVR® 8-b.
ATMEL Corporation
ATTINY84 - (ATTINYx4) 8-bit Microcontroller
ATtiny24/44/84 8-bit AVR Microcontroller with 2/4/8K Bytes In-System Programmable Flash DATASHEET Features ● High performance, low power AVR® 8-bit mi.
OSRAM
F0118G - GaAs Infrared Emitting Diode
GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary .
Luminent
L-13-155-G-B - Light Emitting Diodes
L-13-155-G-B 1310 nm Light Emitting Diodes www.DataSheet4U.com Features • High efficiency • -40 to +85˚C operating temperature • Hermetically sealed .
Lattice Semiconductor
LC4384C-35FN256C - Super Fast High Density PLDs
ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat.
Lattice Semiconductor
LC4384C-5TN176C - Super Fast High Density PLDs
ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat.
Fairchild Semiconductor
TIL38 - P-N GaAs Infrared-Emitting Diode
P-N GaAs Infrared-Emitting Diode Optoelectronic Products 4-72 TIL38 General Description The TIL38 is a p-n GaAs infrared-emitting diode in a low-cos.
Rohm
SIR-34ST3F - Infrared light emitting diode
Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This .
Hittite Microwave Corporation
HMC941 - 0.5dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR
ATTENUATORS - DIGITAL - CHIP HMC941 v00.0910 0.5 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 30 GHz 1 Typical Applications The HMC941 is idea.
PARA
L-318 - (L-31x) 3.0mm INFRARED EMITTING DIODE
L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis.
Vishay Siliconix
TSAL6200 - High Power Infrared Emitting Diode
www.vishay.com TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW 94 8389 DESCRIPTION TSAL6200 is an infrared, .
Renesas Technology
RNA51957B - Voltage Detecting a System Resetting IC Series
www.DataSheet4U.com RNA51957A,B Voltage Detecting, System Resetting IC Series REJ03D0912-0100 Rev.1.00 Oct 10, 2008 Description RNA51957A,B are semi.
Lattice Semiconductor
LC4384C-75TN176C - Super Fast High Density PLDs
ispMACH 4000V/B/C/Z Family January 2004 TM Coolest Power C TM 3.3V/2.5V/1.8V In-System Programmable SuperFAST TM High Density PLDs Data Sheet Feat.
ISOCOM
MF3011 - GaAs infrared emitting diode
MF3009, MF301x, MF302x DESCRIPTION The MF3009, MF301x and MF302x series of devices consist of a GaAs infrared emitting diode optically coupled to a l.
ISOCOM
MF3020 - GaAs infrared emitting diode
MF3009, MF301x, MF302x DESCRIPTION The MF3009, MF301x and MF302x series of devices consist of a GaAs infrared emitting diode optically coupled to a l.
Orient
OR-1007 - infrared emitting diode
Shenzhen Orient Components Co ., Ltd OR-10XX ORIENT Photo coupler Product Data Sheet Part Number: Customer: Date: OR-10XX SHENZHEN ORIENT COMPONE.
Lattice Semiconductor
81080V - 3.3V In-System Programmable SuperBIG High Density PLD
ispLSI 81080V ® 3.3V In-System Programmable SuperBIG™ High Density PLD Features • SuperBIG HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 3.3V Power Sup.
