Ten-Channel Datasheet | Specifications & PDF Download

30V N-Channel MOSFETs PDD3906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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80V N-Channel MOSFETs PDP8974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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30V N-Channel MOSFETs PDC3908X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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60V P-Channel MOSFETs PDC6959X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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FEATURES ► 256 positions ► Multiple independently programmable channels ► AD5204—4-channel ► AD5206—6-channel ► Potentiometer replacement ► Terminal r

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40V N+P Dual Channel MOSFETs PDS4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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FEATURES 256-position variable resistance device Replaces 1, 2, or 4 potentiometers 1 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Power shutdown—less than 5 μA 3-wire,SP

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FEATURES 256-position variable resistance device Replaces 1, 2, or 4 potentiometers 1 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Power shutdown—less than 5 μA 3-wire,SP

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a FEATURES 64 Position Replaces Four Potentiometers 10 k⍀ , 100 k ⍀ Power Shutdown—Less than 5 ␮ A 3-Wire SPI-Compatible Serial Data Input 10 MHz Upda

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100V P-Channel MOSFETs PDP0959 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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30V N-Channel MOSFETs PDC3803R General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs PDL3907 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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FEATURES 256-position variable resistance device Replaces 1, 2, or 4 potentiometers 1 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Power shutdown—less than 5 μA 3-wire,SP

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FEATURES ► 256 positions ► Multiple independently programmable channels ► AD5204—4-channel ► AD5206—6-channel ► Potentiometer replacement ► Terminal r

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv

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LSC04N70A/LSD04N70A/LSG04N70A/LSH04N70A LonFET Lonten N-channel 700V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated

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a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V

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