UPB Datasheet | Specifications & PDF Download

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PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appli

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PD - 97562 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

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PC3ST21NSZ Series ∗Non-zero cross type is also available. (PC3ST11NSZ Series) PC3ST21NSZ Series VDRM : 600V, Zero cross type DIP 4pin Phototriac Coup

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PC3ST21NSZ Series ∗Non-zero cross type is also available. (PC3ST11NSZ Series) PC3ST21NSZ Series VDRM : 600V, Zero cross type DIP 4pin Phototriac Coup

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PD - 95568 IRG4PC60UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies up t

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PDP TRENCH IGBT PD - 97386 IRG6IC30UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appli

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PD - 96066B IRF1902UPbF HEXFET® Power MOSFET l l l www.DataSheet4U.com l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square

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PD - 97402A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

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PDP TRENCH IGBT PD - 97351A IRG6I320UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP appl

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PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Features Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Ene

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PD - 95428A INSULATED GATE BIPOLAR TRANSISTOR IRG4BC40UPbF UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40

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PD - 97411 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

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PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction tempe

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