IRF1902UPBF Datasheet - International Rectifier

IRF1902UPBF HEXFET Power MOSFET

These N-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 h.

IRF1902UPBF Features

* ia 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2006 www.irf.com 9

IRF1902UPBF Datasheet (229.54 KB)