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IRF1902 Power MOSFET

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Description

PD - 94282A IRF1902 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(on) .
S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25.

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Features

* the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information.11/01 www. irf. com 9

Applications

* . The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package

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