XT_MB Datasheet | Specifications & PDF Download

CY7C2262XV18/CY7C2264XV18 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Two

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Features and Benefits PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64m

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CY7C1563XV18/CY7C1565XV18 72-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR® II+ Xtreme SRAM Four-Word B

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Features and Benefits PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-140mV max @ -1A) • RSAT = 65mΩ

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Features and Benefits PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ

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Features and Benefits PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64m

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 Product Introduction Token (XT MB) for TV/VCR Stage is Murata Trap Filters TPS MB Compatible. (XT MB) Trap Filter Quick Selection :  Dimensions (Un

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CY7C2262XV18/CY7C2264XV18 36-Mbit QDR® II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 36-Mbit QDR® II+ Xtreme SRAM Two

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CY7C1263XV18 CY7C1265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ Xtreme SRAM Four-Word B

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BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation

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www.DataSheet4U.com Intel® LXT972M Single-Port 10/100 Mbps PHY Transceiver Datasheet The Intel® LXT972M Single-Port 10/100 Mbps PHY Transceiver is an

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Featur

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CY7C2563XV18/CY7C2565XV18 72-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ Xtreme SRAM Fo

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CY7C1263XV18 CY7C1265XV18 36-Mbit QDR® II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) 36-Mbit QDR® II+ Xtreme SRAM Four-Word B

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BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation

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www.DataSheet4U.com Intel® LXT9880A/9860A and LXT9883A/9863A Multi-Port 10/100 Mbps Repeaters Specification Update January 2004 www.DataSHeet4U.com

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A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features NPN Transistor • BVCEO > 15V • IC

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A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features • NPN Transistor • VCEO = 80V

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Features and Benefits NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ fo

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