axial Datasheet | Specifications & PDF Download

P300A - P300M AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 3.0 A Features High Current Capability and Low Forward Voltage Drop

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www.DataSheet4U.com 15,000 V - 20,000 V Rectifiers 25 mA - 50 mA Forward Current 200 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED X150FG X200FG

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Fax-on-Demand: (800) 260-9099 (650) 361-6523 Before ordering check with factory for most current data. FAX ID 5600 Description Data sheet Coaxial C

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Features Low capacitance. (C = 3.5pF max) Short reverse recovery time. (t rr = 8.0ns max) High reliability with glass seal. Mechanical Data Ca

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1N5400 - 1N5408 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 3.0 A Features High Current Capability and Low Forward Voltage Dro

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1N5400 - 1N5408 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 3.0 A Features High Current Capability and Low Forward Voltage Dro

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PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25

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1N5391 - 1N5399 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.5 A Features · The plastic package carries Underwriters La

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1N5391 - 1N5399 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.5 A Features · The plastic package carries Underwriters La

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1N4001 - 1N4007 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused Junction Low Forward Voltage Drop High

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descriptio

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FRED Module Fast Recovery Epitaxial Diode MEA/MEK/MEE 300-06DA VRRM = 600 V IFAVM = 304 A trr = 250 ns Part number MEA 300-06DA MEK 300-06DA MEE 300

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BAY80 AXIAL LEADED SWITCHING DIODES Features Switching speed: max. 50 ns General application Continuous reverse voltage: max. 120 V Repetitiv

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1SS141 - 1SS147 AXIAL LEADED FAST SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode These diodes are also avai

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1SS141 - 1SS147 AXIAL LEADED FAST SWITCHING DIODE Features Silicon epitaxial planar diode High speed switching diode These diodes are also avai

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1N5391 - 1N5399 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.5 A Features · The plastic package carries Underwriters La

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GPP10A - GPP10M AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused Junction Low Forward Voltage Dro

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1N4001 - 1N4007 AXIAL LEADED RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused Junction Low Forward Voltage Drop High

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