multicomp Datasheet | Specifications & PDF Download

TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

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Zener Diode 1N4728A-1N4764A Features: • High reliability. • Very sharp reverse characteristic. • Low reverse current level. • Vz-tolerance ±5%. Appl

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PNP Power Transistor Complementary Silicon Plastic Power Transistors Features: Designed for use in general purpose power amplifier and switching appl

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Glass Passivated Bridge Rectifier Features •  Surge overload -240~500 Amperes peak •  Low forward voltage drop •  Electrically isolated base -2000 Vo

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Glass Passivated Bridge Rectifier Features •  Surge overload -240~500 Amperes peak •  Low forward voltage drop •  Electrically isolated base -2000 Vo

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MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications.

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Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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13 Amp Plug Style Case PS5 Series Features: • • • • • A battery eliminator style case moulded in black or white ABS with choice of plastic or brass ea

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Bridge Rectifier GBPC Series GBPC Features: • Plastic material • Integrally moulded heatsink provide very low thermal resistance for maximum heat dis

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BC847B, BC847C General Purpose SMD NPN Transistors SOT-23 Features: • Silicon planar epitaxial transistors. • General purpose NPN transistors. Pin

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Zener Diode 1N4728A-1N4764A Features: • High reliability. • Very sharp reverse characteristic. • Low reverse current level. • Vz-tolerance ±5%. Appl

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P6KE Series DO-15 Features: • Plastic package • Exceeds environmental standards of MIL-STD-19500 • 600 W surge capability at 10 × 1,000 µs waveform,

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MJE15032 Power Transistor Features: • High power complimentary pairs. • For high quality audio output stages, and general purpose push-pull amplifier

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - TIP131, TIP136 = 100V (Minimu

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TIP47, 50 High Voltage Power Transistors High Voltage NPN Silicon Power Transistors are designed for line operated audio output amplifier, and switch

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BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low

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Transistor Unijunction 1. Emitter 2. Base 1 3. Base 2 Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing

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