XB4908 (XySemi)
One Cell Lithium-ion/Polymer Battery Protection
XB4908 SERIES
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB4908 SERIES product is a high i ntegration solution for li
(32 views)
XB4908AJL (XySemi)
One Cell Lithium-ion/Polymer Battery Protection IC
XB4908AJL
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB4908AJL product is a high integr ation solution for lithium-i
(16 views)
MST5333B (Milestone Semiconductor)
Low Dropout Voltage Regulator
Milestone Semiconductor Inc.
MST53XXB
35V, 1.6μA Ultra Low Quiescent Current,
200mA, Low Dropout Voltage Regulator
Description
The MST53XXB series
(13 views)
XB8886A (XySemi)
One Cell Lithium-ion/Polymer Battery Protection IC
XB8886A
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One Cell Lithium-ion/P
(13 views)
XB8608A (XySemi)
One Cell Lithium-ion/Polymer Battery Protection IC
XB8608A
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One Cell Lithium-ion/P
(10 views)
LP4054 (Lowpowersemi)
500mA Standalone Linear Li-Ion Battery Charger
Preliminary Datasheet
LP4054
500mA Standalone Linear Li-Ion Battery Charger
General Description
The LP4054 is a complete constant-current/constant-
(9 views)
PE01P15KA (Semione)
P-Channel Enhancement Mode Power MOSFET
P-Channel Enhancement Mode Power MOSFET
Description
The PE01P15KA uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It
(8 views)
XB4908VD (XySemi)
One Cell Lithium-ion/Polymer Battery Protection IC
XB4908VD
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB4908VD product is a high integra tion solution for lithium-ion/
(8 views)
XB5608A (XySemi)
One Cell Lithium-ion/Polymer Battery Protection
XB5608A
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One Cell Lithium-ion/Polymer Batter
(7 views)
XB4908A (XySemi)
One Cell Lithium-ion/Polymer Battery Protection
XB4908 SERIES
One Cell Lithium-ion/Polymer Battery Protection IC
GENERAL DESCRIPTION
The XB4908 SERIES product is a high i ntegration solution for li
(7 views)
PE2312 (semi one)
Dual P & N-Channel Enhancement Mode Power MOSFET
PE2312
Dual Enhancement Mode Power MOSFET (N- and P- Channel)
DESCRIPTION
The PE2312 uses advanced trench technology to provide excellent RDS(ON), l
(5 views)
XB4301D (XySemi)
One Cell Lithium-ion/Polymer Battery Protection IC
XB4301D
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One Cell Lithium-
(5 views)
ZLNB1001 (Zetex Semiconductors)
DBS tone and polarity multiplex controller
ZLNB1001 DBS tone and polarity multiplex controller
Description
The ZLNB1001 multiplex controller is one of a wide range of satellite receiver LNB and
(5 views)
FS312F-G (Fortune Semiconductor)
One Cell Lithium-ion/Polymer Battery Protection IC
REV. 1.2 FS312F-G-DS-12_EN
May 2014
For RefPerrFoepOnecRrteTieUOsnNlEy'
Datasheet
FS312F-G
One Cell Lithium-ion/Polymer Battery Protection IC
For
(4 views)
HB56SW3272ESK (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(4 views)
HB56SW3272ESK-5 (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
(4 views)
MST5330B (Milestone Semiconductor)
Low Dropout Voltage Regulator
Milestone Semiconductor Inc.
MST53XXB
35V, 1.6μA Ultra Low Quiescent Current,
200mA, Low Dropout Voltage Regulator
Description
The MST53XXB series
(4 views)
PE40N12 (semi one)
N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET
Description
The PE40N12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate
(4 views)
PED2023 (semi one)
P-Channel Enhancement Mode Power MOSFET
PED2023
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PED2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge
(4 views)
PE60R900K (semi one)
N-Channel MOSFET
PE60R900I ,PE60R900K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and de
(4 views)