.
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.
Toshiba
TC74VCX162841FT - LOW VOLTAGE 20-BIT D-TYPE LATCH WITH 3.6V TOLERANT INPUTS AND OUTPUTS
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STMicroelectronics
27C4002 - 4 Mbit 256Kb x16 UV EPROM and OTP EPROM
M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu.
STMicroelectronics
27C800 - 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF.
STMicroelectronics
29F200 - 2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM.
ON Semiconductor
74VCX16244 - Low-Voltage 1.8V/2.5V/3.3V 16-Bit Buffer
www.DataSheet4U.com 74VCX16244 Low−Voltage 1.8V/2.5V/3.3V 16−Bit Buffer http://onsemi.com MARKING DIAGRAM 48 48 1 With 3.6 V−Tolerant Inputs and Out.
Hynix Semiconductor
HY27US08281A - (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Document Title 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory Revision History Rev.
Hynix Semiconductor
H55S1262EFP-60M - 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
www.DataSheet4U.com 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M (8Mx16bit) Mobile SDRAM Memory Cell Array - Organiz.
Simtek
STK14EC16 - 256Kx16 AutoStore nvSRAM
STK14EC16 Preliminary FEATURES • 15, 25, 45 ns Read Access and R/W Cycle Time • Unlimited Read/Write Endurance • Automatic Non-volatile STORE on Power.
Samsung Electronics
K4X51163PG-FGC7 - 32Mx16 Mobile DDR SDRAM
Final K4X51163PG - FGC6(7)(8) Mobile DDR SDRAM 32Mx16 Mobile DDR SDRAM (VDD/VDDQ 1.8V/1.8V) www.DataSheet4U.com -1- Revision 1.0 May 2008 Final K.
Winbond
25X16AVIG - Serial Flash Memory
W25X16, W25X16A, W25X32, W25X64 16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI Publication Release Date: May .
ISSI
IS34MW04G088 - 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS34MW04G088/168 IS35MW04G088/168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G088/168 4Gb (x8/x16) 1.8V NAND FLA.
Microsemi
WF2M16-150DAQ5A - 2Mx16 NOR Flash MODULE
WF2M16-XXX5 PRELIMINARY* 2Mx16 NOR Flash MODULE, SMD 5962-97610 FEATURES Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic.
Microsemi
WF2M16-150DAI5 - 2Mx16 NOR Flash MODULE
WF2M16-XXX5 PRELIMINARY* 2Mx16 NOR Flash MODULE, SMD 5962-97610 FEATURES Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic.
Fairchild Semiconductor
74LVX163 - Low Voltage Synchronous Binary Counter
74LVX163 Low Voltage Synchronous Binary Counter with Synchronous Clear October 1996 Revised March 1999 74LVX163 Low Voltage Synchronous Binary Count.
Fairchild Semiconductor
74VCX162240 - Low Voltage 16-Bit Inverting Buffer/Line Driver
74VCX162240 Low Voltage 16-Bit Inverting Buffer/Line Driver with 3.6V Tolerant Inputs and Outputs and 26Ω Series Resistors in Outputs January 1998 Re.
Fairchild Semiconductor
74VCX16240 - Low Voltage 16-Bit Inverting Buffer/Line Driver
www.DataSheet4U.com 74VCX16240 Low Voltage 16-Bit Inverting Buffer/Line Driver with 3.6V Tolerant Inputs and Outputs January 1998 Revised June 2005 .
STMicroelectronics
M27C320 - 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W.
STMicroelectronics
M27C322 - 32 Mbit 2Mb x16 UV EPROM and OTP EPROM
M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK RO.
