http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4452 Datasheet Preview

AO4452 Datasheet

100V N-Channel MOSFET

No Preview Available !

AO4452 pdf
AO4452
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AO4452 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
8A
< 25m
< 31m
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM
IAR
EAR
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
100
±25
8
6.5
57
28
39
3.1
2
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 3: May 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO4452 Datasheet Preview

AO4452 Datasheet

100V N-Channel MOSFET

No Preview Available !

AO4452 pdf
AO4452
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2 3.2 4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
20.5 25
m
36 43
VGS=7V, ID=6.5A
25 31 m
gFS Forward Transconductance
VDS=5V, ID=8A
23 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.66 1
V
IS Maximum Body-Diode Continuous Current
5A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1400
115
33
0.3
1770
165
55
0.65
2200
215
80
1.0
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=8A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=6,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
14 28 42 nC
4 9 14 nC
6 10 14 nC
12 ns
4 ns
17 ns
5 ns
11 16 21 ns
42 60 78 nC
21 27 33 ns
20 28 36 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: May 2012
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number AO4452
Description 100V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
PDF Download
AO4452 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 AO4450 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AO4450 pdf
2 AO4450 40V N-Channel MOSFET Freescale
Freescale
AO4450 pdf
3 AO4451 P-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AO4451 pdf
4 AO4452 100V N-Channel MOSFET Freescale
Freescale
AO4452 pdf
5 AO4452 100V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AO4452 pdf
6 AO4453 12V P-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AO4453 pdf
7 AO4454 100V N-Channel MOSFET Freescale
Freescale
AO4454 pdf
8 AO4454 100V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AO4454 pdf
9 AO4455 30V P-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AO4455 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components