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* -30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.5V Super high density cell d.

P-Channel Enhancement Mode MOSFET The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.

ACE2301

ACE2302

ACE2302BBM

ACE2302M

ACE2304

ACE2305

ACE2308E

ACE2320M

ACE2341

ACE2358M

ACE2370M

ACE2372M

ACE2390M