ACE2305 Datasheet - ACE Technology

P-Channel Enhancement Mode MOSFET

ACE2305 Features

* -15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Excep

ACE2305 General Description

P-Channel Enhancement Mode MOSFET The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited.

ACE2305 Datasheet (215.52 KB)

ACE2305 Datasheet Preview — Preview of ACE2305 PDF

Datasheet Details

Part number:

ACE2305

Manufacturer:

ACE Technology

File Size:

215.52 KB

Description:

P-channel enhancement mode mosfet.

📁 Related Datasheet

ACE2301 P-Channel Enhancement Mode MOSFET (ACE Technology)

ACE2302 N-Channel Enhancement Mode MOSFET (ACE Technology)

ACE2302BBM N-Channel MOSFET (VBsemi)

ACE2302M N-Channel MOSFET (ACE Technology)

ACE2303 P-Channel Enhancement Mode MOSFET (ACE Technology)

ACE2304 N-Channel Enhancement Mode MOSFET (ACE Technology)

ACE2308E N-Channel MOSFET (ACE Technology)

ACE2320M N-Channel MOSFET (ACE Technology)

ACE2341 P-Channel Enhancement Mode MOSFET (ACE Technology)

ACE2358M N-Channel MOSFET (ACE Technology)

TAGS

ACE2305 P-Channel Enhancement Mode MOSFET ACE Technology

Image Gallery

ACE2305 Features

ACE2305 General Description

Datasheet Details

File Size:

Description:

ACE2305 Distributor