SSC8020GS8 Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. 1/5 Analog Future SSC8020GS8 Ratings @ TA = 25°C unless otherwise.
SSC8020GS8 Key Features
- General Description