SSC8039GS1 - P-Channel Enhancement Mode MOSFET

General Description

on-state resistance.

Key Features

s VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A.

SSC8039GS1 p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8039GS1
Manufacturer	AFSEMI
File Size	332.29 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	SSC8039GS1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8039GS1 P-Channel Enhancement Mode MOSFET  Features VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.