SSC8039GT8
SSC8039GT8 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -30V
VGS ±20V
RDSon TYP 15m R@-10V 20m R@-4V5
ID -12A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin Configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
SSC-1V0
Units:mm http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
ID IDM PD TJ, TSTG
Limit -30 ±20
-12 -45 2.5 -55 to 150
Unit V...
