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SSC8039GS1 - P-Channel Enhancement Mode MOSFET

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Part number SSC8039GS1
Manufacturer AFSEMI
File Size 332.29 KB
Description P-Channel Enhancement Mode MOSFET
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Description

Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8039GS1 Absolute Maximum Ratings @TA = 25℃ unless otherwise noted

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