SSC8039GT4
SSC8039GT4 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -30V
VGS ±20V
RDSon TYP 15m R@-10V 20m R@-4V5
ID -50A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
SSC-1V0
Unit: mm TO220 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage Operating and Storage Temperature Range
Pulsed Drain Current (Note 2)
Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1)
Total Power Dissipation (Note 1)
Pulsed Drain Current (Note 2)
Mounted on...
