SSC8039GT3
SSC8039GT3 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -30V
VGS ±20V
RDSon TYP 15m R@-10V 20m R@-4V5
ID -11A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
SSC-1V0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
PD TJ, TSTG
Ratings 30 ±20 11 28 2.5
-55 to +150
Unit V V
W °C
- Electrical Characteristics @TA = 25℃...
