SSC8039GQ4
SSC8039GQ4 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -30V
VGS ±20V
RDSon TYP 15m R@-10V 20m R@-4V5
ID -10A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin configuration
- General Description
Bottom View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
SSC-1V0
Package: DFN3X3 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
Symbol VDSS VGSS
PD TJ, TSTG
Limit -30 ±20 -10
-50 3 -55 to +150
Unit...
