SSC8042GS6 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Package Information Applications Load Switch Portable Devices

Key Features

s.
VDS 40V VGS ±12V RDSon TYP 30mR@10V 35mR@4V5 ID 6A.
General.

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SSC8042GS6 n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8042GS6
Manufacturer	AFSEMI
File Size	79.97 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	SSC8042GS6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8042GS6 N-Channel Enhancement Mode MOSFET  Features  VDS 40V VGS ±12V RDSon TYP 30mR@10V 35mR@4V5 ID 6A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.  Package Information Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.