SSC8062GS1
SSC8062GS1 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- Applications
VDS 60V
VGS ±20V
RDSon TYP 30m R@10V 35m R@4V5
ID 6A
- Load Switcing;
- PWM application
- General Description
- Pin configuration
SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.
- Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm
SSC-V1.0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Drain Current
Continuous Pulse
Total Power Dissipation (note1)
Operating and Storage Junction Temperature Range
Note1: Surface Mounted on 1in pad area.
VGSS ID IDM PD
TJ, TSTG
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings 60 ±20 6 45 2
-55 to +150
Parameter(note2)
Symbol
Test Conditions
Min Typ
OFF...
